Temperature studies on a single InAs/InP QD layer laser emitting at 1.55 μm

Physica Status Solidi C: Conferences

Volumn 3, Issue 3, 2006, Pages 407-410

  Homeyer, E ^a   Piron, R ^a   Caroff, P ^a   Paranthoen, C ^a   Dehaese, O ^a   Le Corre, A ^a   Loualiche, S ^a  

^a UNIVERSITÉ DE RENNES 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROMAGNETIC WAVE EMISSION; OPTICAL INSTRUMENTS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; TELECOMMUNICATION SYSTEMS; TEMPERATURE MEASUREMENT; SEMICONDUCTOR LASERS;

ELECTRICAL INJECTION; MATERIAL QUALITY; ROOM TEMPERATURE; THRESHOLD CURRENT DENSITY;

LIGHT EMISSION; TEMPERATURE;

ELECTRICAL INJECTION; HOMOGENEOUS BROADENING; INCREASING TEMPERATURES; OPTICAL TELECOMMUNICATION; SINGLE QUANTUM DOT; SPECTRAL BROADENING; TEMPERATURE DEPENDENT; TEMPERATURE STUDY;

EID: 33646165256     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200564151     Document Type: Conference Paper

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