Highly-ordered GaAs/AlGaAs quantum-dot arrays on GaAs (001) substrates grown by molecular-beam epitaxy using nanochannel alumina masks

Applied Physics Letters

Volumn 82, Issue 6, 2003, Pages 967-969

  Mei, X ^a   Blumin, M ^a   Sun, M ^a   Kim, D ^a   Wu, Z H ^a   Ruda, H E ^a   Guo, Q X ^b  

^a UNIVERSITY OF TORONTO   (Canada)

^b SAGA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS; EPITAXIAL GROWTH; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

NANOHOLE CHANNELS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037428822     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1544065     Document Type: Article

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