Fabrication of ferromagnetic (Ga,Mn)As by ion irradiation

Journal of Magnetism and Magnetic Materials

Volumn 321, Issue 9, 2009, Pages 1130-1132

  Chen, C H ^a   Niu, H ^a   Hsieh, H H ^b   Cheng, C Y ^a   Yan, D C ^c   Chi, C C ^a   Kai, J J ^a   Wu, S C ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL DEFENSE UNIVERSITY   (Taiwan)

^c INSTITUTE OF PHYSICS   (Taiwan)

Author keywords

(Ga; Magnetic materials; Mn)As; Recrystallization; Solid phase epitaxy

Indexed keywords

CRYSTAL GROWTH; CURIE TEMPERATURE; FERROMAGNETIC MATERIALS; FERROMAGNETISM; MAGNETIC DEVICES; MAGNETIC SEMICONDUCTORS; MAGNETIC THIN FILMS; MAGNETIZATION; MANGANESE COMPOUNDS; RECRYSTALLIZATION (METALLURGY); TEMPERATURE MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY;

(GA; CRYSTALLINE QUALITIES; DILUTE MAGNETIC SEMICONDUCTORS; EPITAXIAL CRYSTALLIZATIONS; FERROMAGNETIC TRANSITIONS; HIGH CURIE TEMPERATURES; IMPLANTED LAYERS; ION IRRADIATIONS; LOW-TEMPERATURE ANNEALING; MN)AS; RECRYSTALLIZATION; SOLID-PHASE EPITAXY; TEM; X-RAY DIFFRACTIONS;

MANGANESE;

EID: 61849096716     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmmm.2008.10.042     Document Type: Article

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