Optimum temperature for ion beam induced crystallization of GaAs

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 117, Issue 1-2, 1996, Pages 207-209

  Schulz, R ^a   Bachmann, T ^a   Kaiser, U ^a   Glaser, E ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CRYSTAL GROWTH; CRYSTALLIZATION; EPITAXIAL GROWTH; INTERFACES (MATERIALS); ION IMPLANTATION; IRRADIATION; NUCLEATION; POLYCRYSTALLINE MATERIALS; TEMPERATURE;

AMORPHOUS SURFACE LAYERS; CRYSTALLIZATION RATE; EPITAXIAL CRYSTALLIZATION; GALLIUM ARSENIDE WAFERS; IMPLANTATION DOSES; ION BEAM INDUCED CRYSTALLIZATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030216640     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(96)00232-7     Document Type: Article

References (12)

1. F, Priolo and E. Rimini, Mat. Sci. Rep. 5 (1990) 319, and references therein.
2. [21 J. Linnros, R.G. Elliman, W.L. Brown, J. Mater. Res. 3 (1988) 1208.
3. G. Holmén, A. Burén, P. Högberg, Rad. Effects 24 (1975) 51.
4. T. Bachmann, R. Schulz, E. Glaser, U. R̄ichter and S. Schippel, Nucl. Instr. and Meth. B 106 (1995) 350.
5. S.S. Kular, B.J. Sealy, K.G. Stephens, D.K. Sadana and G.R. Booker, Sol. State Electron. 23 (1980) 831.
6. K.G. Rossiter, R.G. Elliman, I.V. Mitchell, A.P. Pogany, and J.S. Williams, Nucl. Instr. and Meth, 218 (1983) 639.
7. E. Glaser, T. Bachmann, R. Schulz, S. Schippel and U. Richter, Nucl. Instr. and Meth. B 106 (1995) 281.
8. S.T. Johnson, J.S. Williams, E. Nygren and R.G. Elliman, J. Appl. Phys. 64 (1988) 6567.
9. S.T. Johnson, R.G. Elliman and J.S. Williams, Nucl. Instr. and Meth. B 39 (1989) 449.
10. N. Kobayashi, M. Hasegawa, H. Kobayashi, N. Hayashi, M. Shinohara, F. Ohtani and N. Asari, Nucl. Instr, and Meth. B 59/60 (1991) 449.
11. E. Glaser, T. Bachmann, R. Schulz and U. Richter, Proc Int. Conf. IBMM 1995, Canberra/Australia, p. 882.
12. T. Bachmann, E. Glaser, R. Schulz, U. Kaiser, G. Sáfrán, Proc. 4th Europ. Conf. on Acc. in Appl. Res. and Techn. 1995, Zürich/Switzerland, Nucl. Instr, and Meth. B 113 (1996) 214.