Re-crystallization of Mn implanted GaAs by He+ ion irradiation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 266, Issue 8, 2008, Pages 1734-1736

  Chen, C H ^a   Niu, H ^a   Cheng, C Y ^a   Hsieh, H H ^b   Wu, S C ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL DEFENSE UNIVERSITY   (Taiwan)

Author keywords

Ferromagnetic semiconductor; Ion beam induced epitaxial crystallization; Ion implantation

Indexed keywords

CRYSTALLIZATION KINETICS; GROWTH RATE; ION BEAMS; ION IMPLANTATION; MAGNETIC SEMICONDUCTORS;

FERROMAGNETIC SEMICONDUCTORS; ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION; ROOM TEMPERATURE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 43049154959     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2008.01.062     Document Type: Article

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