AC transport measurement of Mn ion-implanted p+-GaAs:C

Journal of Magnetism and Magnetic Materials

Volumn 272-276, Issue SUPPL. 1, 2004, Pages

  Lee, J S ^a   Lim, J D ^a   Suh, K S ^a   Shim, S B ^a   Park, Y D ^a   Abernathy, C R ^b   Pearton, S J ^b   Kim, Y S ^a   Khim, Z G ^a   Wilson, R G ^c  

^a Seoul National University   (South Korea)

^b University of Florida   (United States)

^c NONE

Author keywords

(Ga,Mn)As; AC transport measurement; Anomalous Hall effect; High resolution X ray diffraction; Ion implantation

Indexed keywords

ALUMINA; CALCIUM; DOPING (ADDITIVES); EPITAXIAL GROWTH; ION IMPLANTATION; PHASE TRANSITIONS; RUTHENIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

(GA,MN)AS; AC TRANSPORT MEASUREMENT; ANOMALOUS HALL EFFECTS; HIGH-RESOLUTION X-RAY DIFFRACTION;

GALLIUM COMPOUNDS;

EID: 23144432199     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmmm.2003.12.810     Document Type: Conference Paper

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