Mn implanted GaAs by low energy ion beam deposition

Journal of Crystal Growth

Volumn 264, Issue 1-3, 2004, Pages 31-35

  Song, Shu Lin ^a   Chen, Nuo Fu ^a,b   Zhou, Jian Ping ^a   Yin, Zhi Gang ^a   Li, Yan Li ^a   Yang, Shao Yan ^a   Liu, Zhi Kai ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b INSTITUTE OF MECHANICS   (China)

Author keywords

A1. X ray diffraction; A3. Ion beam deposit; B2. Magnetic materials; B2. Semiconducting gallium arsenide

Indexed keywords

ANNEALING; ANTIFERROMAGNETIC MATERIALS; ATOMIC FORCE MICROSCOPY; CRYSTALLIZATION; DIFFRACTOMETERS; FERROMAGNETIC MATERIALS; HYSTERESIS; ION BEAM ASSISTED DEPOSITION; ION IMPLANTATION; MAGNETIC PROPERTIES; MAGNETIZATION; MONOCHROMATORS; X RAY DIFFRACTION ANALYSIS;

CRYSTAL SCATTERING; HYSTERESIS LOOP; ION BEAM DEPOSIT SYSTEMS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 1342306683     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.12.039     Document Type: Article

References (15)

1. Ohno H., Shen A., Matsukara F., Iewa A., Endo A., Iye Y. Appl. Phys. Lett. 69:1996;363.
2. Litinov V.I., Dugaev V.K. Phys. Rev. Lett. 86:2001;5593.
3. J. Schliemann, J. König, Hsiu-Hau, L. Allan, H. MacDonald, Appl. Phys. Lett. 78 (2001) 1550.
4. Dietl T., Ohno H., Matsukura F., Cibert J., Ferrand D. Science. 287:2000;1019.
5. Liu X., Sasaki Y., Furdyna J.K. Appl. Phys. Lett. 79:2001;2414.
6. Shono T., Hasegawa T., Fukumura T., Matsukura F., Ohno H. Appl. Phys. Lett. 77:2000;1363.
7. Zhang S. Phys. Rev. Lett. 85:2000;393.
8. Sanvito S., Hilll N.A. Appl. Phys. Lett. 78:2001;3493.
9. Pearton S.J., Overberg M.E., Thaler G., Abernathy C.R. J. Vac. Sci. Technol. A. 20:2002;721.
10. T. Sasaki, S. Sonoda, Y. Yamamoto, et al., J. Appl. Phys. 91 (2002) 7911.
11. Polyakov A.Y., Smirnov N.B., Govorlov A.V., et al. J. Appl. Phys. 93:2003;6388.
12. Jing Shi, J.M. Kikkawa, R. Proksch, et al., Nature 377 (1995) 707.
13. Chenjia Chen, Ming Cai, Xuezhong Wang, et al., J. Appl. Phys. 87 (2000) 5636.
14. Scarpulla M.A., Dubon O.D., Yu K.M., et al. Appl. Phys. Lett. 82:2003;1251.
15. Qin F.-g., Wang X.-m., Liu Z.-k., et al. Rev. Sci. Instrum. 62:1991;2322.