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Volumn 261, Issue 1-2 SPEC. ISS., 2007, Pages 570-573
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Local structure of Mn implanted in gallium arsenide
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Author keywords
Ferromagnetic semiconductor; Ion implantation; Ion beam induced epitaxial crystallization; Laser processing
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Indexed keywords
FERROMAGNETIC SEMICONDUCTOR;
ION-BEAM-INDUCED EPITAXIAL CRYSTALLIZATION;
LASER PROCESSING;
PARTICLE-INDUCED X-RAY EMISSION;
ANNEALING;
CRYSTAL LATTICES;
ION IMPLANTATION;
RUTHERFORD BACKSCATTERING SPECTROSCOPY;
SEMICONDUCTING GALLIUM ARSENIDE;
STRUCTURAL ANALYSIS;
THERMAL EFFECTS;
X RAY ANALYSIS;
MANGANESE;
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EID: 34447270551
PISSN: 0168583X
EISSN: None
Source Type: Journal
DOI: 10.1016/j.nimb.2007.04.311 Document Type: Article |
Times cited : (7)
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References (9)
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