Fabrication and electrical characterization of heterojunction Mn-doped GaN nanowire diodes on n-Si substrates (GaN:Mn NW/n-Si)

Journal of Electronic Materials

Volumn 38, Issue 4, 2009, Pages 505-510

  Kim, Tae Hong ^a   Jang, Chan Oh ^a   Seong, Han Kyu ^b   Choi, Heon Jin ^b   Lee, Sang Kwon ^a  

^a Chonbuk National University   (South Korea)

^b Yonsei University   (South Korea)

Author keywords

Dielectrophoresis; Heterojunction; Mn doped GaN nanowires

Indexed keywords

ALTERNATING CURRENTS; DEPOSITION TECHNIQUES; DIELECTROPHORESIS; ELECTRICAL CHARACTERIZATIONS; FORWARD VOLTAGE DROPS; GAN NANOWIRES; HETEROJUNCTION STRUCTURES; IDEALITY FACTORS; JUNCTION STRUCTURES; MN-DOPED GAN NANOWIRES; P TYPES; P-N DIODES; P-N STRUCTURES; P-STRUCTURES; PARASITIC RESISTANCES; RECTIFYING BEHAVIORS; SI SUBSTRATES;

CURRENT VOLTAGE CHARACTERISTICS; DIODES; DISTILLATION; ELECTRIC WIRE; ELECTROPHORESIS; GALLIUM NITRIDE; HETEROJUNCTIONS; MANGANESE; MANGANESE COMPOUNDS; NANOWIRES; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SUBSTRATES;

GALLIUM ALLOYS;

EID: 61849086788     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-009-0675-9     Document Type: Conference Paper

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