Microstructural evolution and electrical characteristics of Co-germanide contacts on Ge

Journal of the Electrochemical Society

Volumn 156, Issue 4, 2009, Pages

  Park, K ^a   An, C H ^a   Lee, M S ^a   Yang, C W ^a   Lee, H J ^a   Kim, H ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONTACTORS; MICROSTRUCTURAL EVOLUTION; OHMIC CONTACTS; SCHOTTKY BARRIER DIODES;

CONTACT BEHAVIORS; ELECTRICAL CHARACTERISTICS; ELECTRICAL CONTACTS; FERMI-LEVEL PINNING; FORMATION PROCESS; GERMANIDATION; GERMANIDE; HIGH TEMPERATURES; N-TYPE GE; P TYPES; PROCESS WINDOWS; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY CONTACTS;

GERMANIUM;

EID: 61349165525     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3071634     Document Type: Article

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