A deep-level transient spectroscopy study of Co- and Ni-germanided n-type germanium

Materials Science in Semiconductor Processing

Volumn 9, Issue 4-5 SPEC. ISS., 2006, Pages 554-558

  Opsomer, K ^a,b   Simoen, E ^a   Claeys, C ^a,b   Maex, K ^a,b   Detavernier, C ^c   Van Meirhaeghe, R L ^c   Forment, S ^c   Clauws, P ^c  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c GHENT UNIVERSITY   (Belgium)

Author keywords

DLTS; Germanidation; Schottky barriers

Indexed keywords

DIFFUSION; ELECTRON TRAPS; LEAKAGE CURRENTS; METALLIZING; NICKEL; RAPID THERMAL ANNEALING; SCHOTTKY BARRIER DIODES;

GE SUBSTRATES; GERMANIDATION; THERMAL BUDGETS;

GERMANIUM;

EID: 33845213171     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.08.060     Document Type: Article

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