Current-voltage characteristics of Schottky barriers with barrier heights larger than the semiconductor band gap: The case of NiGen- (001) Ge contact

Journal of Applied Physics

Volumn 97, Issue 11, 2005, Pages

  Chi, D Z ^a   Lee, R T P ^a   Chua, S J ^a   Lee, S J ^b   Ashok, S ^c   Kwong, D L ^d  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c The Pennsylvania State University   (United States)

^d The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT TRANSPORT MECHANISM; METAL OXIDE SEMICONDUCTORS; SEMICONDUCTOR BAND GAP; THERMIONIC-FIELD EMISSIONS;

ANNEALING; CRYSTAL ORIENTATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRON TRANSPORT PROPERTIES; ENERGY GAP; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

SCHOTTKY BARRIER DIODES;

EID: 20544467653     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1923162     Document Type: Article

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