Growth and characterization of HVPE GaN on c-sapphire with CrN Buffer Layer

Institute of Physics Conference Series

Volumn 184, Issue , 2005, Pages 369-372

  Goto, H ^a   Lee, W H ^a   Kinomoto, J ^a   Kim, S T ^a   Cho, M W ^b   Yao, T ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHROMIUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY;

CRYSTALLINITY; FREE STANDING (FS) GAN SUBSTRATES; HYDRIDE VAPOR PHASE EPITAXY (HVPE);

GALLIUM NITRIDE;

EID: 33644539193     PISSN: 09513248     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

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4. X.L.Sun, S.H.Goss, L.J.Brillson, D.C.Look, R.J.Molnar, J.Appl.Phys., 91 (2002) 6729