Self-separation of freestanding GaN from sapphire substrates by hydride vapor phase epitaxy

Physica Status Solidi (A) Applied Research

Volumn 194, Issue 2 SPEC., 2002, Pages 563-567

  Tomita, K ^a   Kachi, T ^a   Nagai, S ^b   Kojima, A ^b   Yamasaki, S ^b   Koike, M ^b  

^a Rd Management Section   (Japan)

^b Toyoda Gosei Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; CARRIER CONCENTRATION; CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); INTERFACES (MATERIALS); SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEPARATION; THERMAL STRESS; VAPOR PHASE EPITAXY;

FREESTANDING WAFERS; HYDRIDE VAPOR PHASE EPITAXY; SELF-SEPARATION;

GALLIUM NITRIDE;

EID: 0036965290     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200212)194:2<563::AID-PSSA563>3.0.CO;2-B     Document Type: Article

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