CrN buffer layer study for GaN growth using Molecular Beam Epitaxy(MBE)

Institute of Physics Conference Series

Volumn 184, Issue , 2005, Pages 365-368

  Lee, W H ^a   Kim, J J ^a   Lee, H S ^b   Zahra, V ^a   Kim, S T ^c   Cho, M W ^a   Yao, T ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b Kyungpook National University   (South Korea)

^c Hanbat National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHROMIUM COMPOUNDS; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SURFACE ROUGHNESS; THERMAL EFFECTS;

BUFFER LAYERS; GROWTH TEMPERATURES; ROOT MEAN SQUARE (RMS);

SINGLE CRYSTALS;

EID: 33644553796     PISSN: 09513248     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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