Tuning of Fermi level position at HfNx / SiO2 interface

Applied Physics Letters

Volumn 94, Issue 8, 2009, Pages

  Rothschild, J A ^a   Eizenberg, M ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

HAFNIUM; SMELTING; WORK FUNCTION;

CAPACITANCE-VOLTAGE MEASUREMENTS; EFFECTIVE WORK FUNCTIONS; IN-SITU; KELVIN PROBES; METAL-INDUCED GAP STATE; NITROGEN CONTENTS; SILICON BAND GAPS;

SILICON COMPOUNDS;

EID: 61349097155     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3089818     Document Type: Article

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