Energy gaps and optical properties for the quaternary AlxGayIn1-x-yN matched to GaN substrate

Materials Chemistry and Physics

Volumn 115, Issue 1, 2009, Pages 122-125

  Hafaiedh, A ^a   Bouarissa, N ^a  

^a KING KHALID UNIVERSITY   (Saudi Arabia)

Author keywords

Electronic structure; Lattice matched and mismatched alloys; Optical properties; Pseudopotential calculations; Quaternary nitrides

Indexed keywords

ALUMINUM; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ENERGY GAP; GALLIUM NITRIDE; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM; SUBSTRATES; ZINC;

CALCULATED VALUES; COMPOSITIONAL DEPENDENCES; DIELECTRIC CONSTANTS; ENERGY BAND GAPS; EXPERIMENTAL DATUM; GAN SUBSTRATES; INDIRECT BAND GAPS; LATTICE MATCHED AND MISMATCHED ALLOYS; LATTICE PARAMETERS; LATTICE-MATCHING; OPTO-ELECTRONIC APPLICATIONS; PSEUDOPOTENTIAL; PSEUDOPOTENTIAL CALCULATIONS; QUATERNARY ALLOYS; QUATERNARY NITRIDES; VIRTUAL CRYSTAL APPROXIMATIONS; ZINC BLENDES;

GALLIUM ALLOYS;

EID: 60949111630     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2008.11.036     Document Type: Article

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