Photoluminescence enhancement in quaternary III-nitrides alloys grown by molecular beam epitaxy with increasing Al content

Journal of Applied Physics

Volumn 103, Issue 4, 2008, Pages

  Fernandez Garrido S ^a   Pereiro, J ^a   Gonzalez Posada F ^a   Muoz, E ^a   Calleja, E ^a   Redondo Cubero, A ^b   Gago, R ^b  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b CENTRO DE MICROANÁLISIS DE MATERIALES   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; EXCITONS; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY;

LIGHT EMITTERS; QUATERNARY III-NITRIDES ALLOYS;

PHOTOLUMINESCENCE;

EID: 40149094023     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2874451     Document Type: Article

References (15)