Effect of nitrogen concentration on electronic energy bands of Ga1-xInxNyAs1-y alloys

Microelectronic Engineering

Volumn 54, Issue 3-4, 2000, Pages 277-286

  Kassali, K ^a   Bouarissa, N ^b  

^a FERHAT ABBAS UNIVERSITY   (Algeria)

^b UNIVERSITY OF M'SILA   (Algeria)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL LATTICES; ELECTRIC POTENTIAL; ELECTRONIC STRUCTURE; ENERGY GAP; GALLIUM ALLOYS; NITRIDES; NITROGEN;

GALLIUM INDIUM NITROGEN ARSENIDE; QUATERNARY ALLOYS; ZINKBLENDE STRUCTURE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0034512456     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(00)00409-3     Document Type: Article

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