Characteristics of undoped and magnesium doped GaN films grown by laser induced MBE

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 59, Issue 1-3, 1999, Pages 94-97

  Gross, M ^a   Henn, G ^a   Ziegler, J ^a   Allenspacher, P ^a   Cychy, C ^a   Schroder H ^a  

^a GERMAN AEROSPACE CENTER DLR   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CARRIER CONCENTRATION; LASER ABLATION; MAGNESIUM; MOLECULAR BEAM EPITAXY; NEODYMIUM LASERS; SAPPHIRE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SILICON CARBIDE;

GALLIUM NITRIDE; LASER BEAM SCANNING;

THIN FILMS;

EID: 0033528921     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00334-1     Document Type: Article

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