Fabrication and PL of Al-doped gallium nitride nanowires

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 357, Issue 4-5, 2006, Pages 374-377

  Zhou, Shao Min ^a  

^a HENAN UNIVERSITY   (China)

Author keywords

III V semiconductors; Photoluminescence; Quantum wires

Indexed keywords

FABRICATION; GALLIUM NITRIDE; III-V SEMICONDUCTORS; NANOWIRES; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WIRES; SINGLE CRYSTALS; WIDE BAND GAP SEMICONDUCTORS;

AL DOPED; AVERAGE DIAMETER; GALLIUM NITRIDE NANOWIRES; GAN NANOWIRES; PL MECHANISM; PL SPECTRA; VAPOR SOLID MECHANISM;

ALUMINUM COMPOUNDS;

EID: 33746185713     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physleta.2006.04.062     Document Type: Article

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