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Journal of Materials Science

Volumn 38, Issue 2, 2003, Pages 343-349

Anodic oxidation of gallium nitride

(8) Pakes, A a Skeldon, P a Thompson, G E a Fraser, J W b Moisa, S b Sproule, G I b Graham, M J b Newcomb, S B c

a UNIVERSITY OF MANCHESTER (United Kingdom)

b NATIONAL RESEARCH COUNCIL CANADA (Canada)

c UNIVERSITY OF LIMERICK (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ANODIC OXIDATION; CARRIER CONCENTRATION; CURRENT DENSITY; DISLOCATIONS (CRYSTALS); ELECTROLYTES; FILMS; HIGH RESOLUTION ELECTRON MICROSCOPY; MOLECULAR BEAM EPITAXY; MORPHOLOGY; POROUS MATERIALS; SURFACE PROPERTIES;

DEFECT CONCENTRATION; HIGH RESOLUTION MICROSCOPY; NON-STOICHIOMETRY; SODIUM TUNGSTATE ELECTROLYTE; SURFACE ANALYSIS;

GALLIUM NITRIDE;

EID: 0037440319 PISSN: 00222461 EISSN: None Source Type: Journal
DOI: 10.1023/A:1021125918526 Document Type: Article

Times cited : (14)

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