Large area Ba1 - xSrxTiO3 thin films for microwave applications deposited by pulsed laser ablation

Thin Solid Films

Volumn 517, Issue 9, 2009, Pages 2878-2881

  Varanasi, C V ^a,b   Leedy, K D ^b   Tomich, D H ^b   Subramanyam, G ^c  

^a UNIVERSITY OF DAYTON RESEARCH INSTITUTE   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

^c UNIVERSITY OF DAYTON   (United States)

Author keywords

Ferroelectric properties; Laser ablation; Oxides; Physical vapor deposition

Indexed keywords

ABLATION; BARIUM; CERAMIC CAPACITORS; CRYSTAL STRUCTURE; DIELECTRIC LOSSES; DIELECTRIC PROPERTIES; ELECTRIC FIELDS; ELECTRIC LOSSES; ELECTRODEPOSITION; FERROELECTRICITY; GRAIN SIZE AND SHAPE; LASER ABLATION; LASER APPLICATIONS; LASERS; MAGNETIC FILMS; MICROWAVES; MOLECULAR BEAM EPITAXY; PROGRAMMABLE LOGIC CONTROLLERS; PULSED LASER APPLICATIONS; PULSED LASER DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON COMPOUNDS; SILICON WAFERS; THIN FILMS; VAPORS; X RAY DIFFRACTION ANALYSIS;

BST FILMS; COMMUTATION QUALITY FACTORS; DEPOSITION CONDITIONS; DIELECTRIC LOSS TANGENTS; DIELECTRIC TUNABILITY; FERROELECTRIC PROPERTIES; GRAIN SIZES; MICROSTRUCTURAL ANALYSIS; MICROWAVE APPLICATIONS; OXIDES; PHYSICAL VAPOR DEPOSITION; PREFERRED ORIENTATIONS; PULSED LASERS; PULSED-LASER ABLATIONS; SI WAFERS; THICKNESS VARIATIONS; UNIFORM FILMS; WAFER DEVICES; X- RAY DIFFRACTIONS;

CRYSTAL ORIENTATION;

EID: 60249102354     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.10.123     Document Type: Article

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