Double patterning scheme for sub-0.25 k1 single damascene structures at NA=0.75, λ=193nm

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5754, Issue PART 3, 2005, Pages 1508-1518

  Maenhoudt, M ^a   Versluijs, J ^a   Struyf, H ^a   Van Olmen, J ^a   Van Hove, M ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROOPTICAL DEVICES; OPTICAL DESIGN; OPTICAL INTERCONNECTS; OPTICAL RESOLVING POWER; PATTERN RECOGNITION;

DOUBLE PATTERNING; INTERCONNECT PROCESSING; LOW-K MATERIALS; SINGLE DAMASCENE STRUCTURES;

LITHOGRAPHY;

EID: 25144436878     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.613326     Document Type: Conference Paper

References (7)

1. O. Hinsinger et al., Demonstration of an Extendable and Industrial 300mm BEOL Integration for 65nm Technology Node, Proceedings IEDM2004, pp.317-320.
2. W. Wu et al., Fabrication of 100 nm pitch copper interconnects by electron beam lithography, Journal of Vac. Sci. and Technol. B, 22(4), L11-L14 (2004).
3. G. Schindler et al., Recent Advances for nano interconnects: conductor reliability and resistivity, Proceedings AMC2002, pp.13-19.
4. 2 6T-SRAM Cell Build With Tall Triple-Gate Devices for 45nm Node Applications Using 0.75NA 193nm Lithography, Proceedings IEDM2004, pp.269-272.
5. Takeaki Ebihara et al., Beyond k1=0.25 lithography: 70-nm L/S patterning using KrF scanners, 23rd Annual BACUS Symposium on Photomask Technology, Proceedings of SPIE, Vol. 5256 (2003), pp. 985-994.
6. S. R. J. Brueck et al., Extension of 193-nm immersion optical lithography to the 22-nm half-pitch node, Proceedings of SPIE, Optical Microlithography XVII, Vol. 5377 (2004), pp. 1315-1322.
7. H. Nakamura et al., Contact hole formation by multiple exposure technique in ultralow-k1 lithography, Proceedings of SPIE, Optical Microlithography XVII, Vol. 5377 (2004), pp. 255-263.