Extending aggressive low k1 design rule requirements for 90nm and 65nm nodes via simultaneous optimization of NA, illumination, and OPC

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5379, Issue , 2004, Pages 190-201

  Roy, Sabita ^a   Van Den Broeke, Doug ^a   Chen, J Fung ^a   Liebchen, Armin ^a   Chen, Ting ^a   Hsu, Stephen ^a   Shi, Xuelong ^a   Socha, Robert ^a  

^a ASML US Inc   (United States)

Author keywords

CPL ; Design rules; Diffraction optical element (DOE); Low k1; NA illumination OPC optimization; Optical proximity correction (OPC); Scattering Bars (SB) ; Technology

Indexed keywords

CONTROL SYSTEMS; DIFFRACTION; MASKS; MICROPROCESSOR CHIPS; OPTICAL RESOLVING POWER; OPTIMIZATION;

CPL TM TECHNOLOGY; DESIGN RULES; DIFFRACTION OPTICAL ELEMENT (DOE); LOW K1; NA ILLUMINATION OPC OPTIMIZATION; OPTICAL PROXIMITY CORRECTION; SCATTERING BARS;

LITHOGRAPHY;

EID: 2942670457     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.536982     Document Type: Conference Paper

References (9)

1. Daniel C. Cole, Orest Bula, Edward W. Conrad, Daniel Coops, William C. Leipold, R. M. Mann and Jeffrey H. Oppold, "Optimization Criteria for SRAM Design- Lithography Contribution", Proc. SPIE Vol. 3677 (1999).
2. http://www-inst.cccs.berkeley.edu/~ee42/Fall2002/LectNotes/Lect24.pdf, p.6.
3. 3, 1(1), p. 13-30 (2002).
4. A.K K. Wong, R. A. Ferguson, L. W. Liebman, S. M. Mansfield, A. F. Molles and O. M. Neisser, "Lithography of Mask Critical dimension error", Proc. SPIE Vol. 3334, p-106, (1998).
5. Steve Hansen, TDC, ASML, CD-SEM data for 90 nm 6% attPSM, personal communications.
6. T.A. Brunner, R. A. Ferguson, "Approximate models for resist processing effects", Proc. SPIE Vol. 2726, p. 198-207 (1996).
7. D. J. Van Den Broeke, J. F. Chen, T. L. Laidig, S. D. Hsu, K. E. Wampler, R. J. Socha, J. S. Petersen, " Complex 2D pattern lithography at 1/4 resolution using chromeless phase lithography (CPL)", Proc. SPIE Vol. 4691, p. 196-214 (2002).
8. D. J. Van Den Broeke, T. L. Laidig, K. E. Wampler, S. Hsu, X. Shi, M. Hsu, P. Burchard, J. F. Chen, "Tuning MEEF for CD control at 65nm node based on chromeless phase lithography (CPL), Proc. SPIE Vol. 4889, p. 579-591 (2002).
9. J. V. Schoot, J. Finder, K. V. Schenau, M. Klaassen and C. Buijk, "The mask error factor: causes and implications for process latitude", Proc. SPIE Vol. 3679, p. 250 (1999)