Real-time observation of charging dynamics in hafnium silicate films using MOS capacitance transients

Microelectronic Engineering

Volumn 84, Issue 9-10, 2007, Pages 2390-2393

  Lu, Y ^a   Hall, S ^a   Buiu, O ^a   Zhang, J F ^b  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

^b LIVERPOOL JOHN MOORES UNIVERSITY   (United Kingdom)

Author keywords

Capacitance transient; Charge trapping; High k

Indexed keywords

CAPACITANCE; CHARGE TRAPPING; ELECTRIC CHARGE; ELECTRIC VARIABLES MEASUREMENT; ELECTRON TRAPS; HIGH TEMPERATURE EFFECTS; REAL TIME SYSTEMS;

CAPACITANCE TRANSIENT; HAFNIUM CONCENTRATION; HAFNIUM SILICATE FILMS;

MOS DEVICES;

EID: 34248635968     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.097     Document Type: Article

References (4)

1. Kerber A., Cartier E., Pantisano L., Degraeve R., Kauerauf T., Kim Y., Hou A., Groeseneken G., Maes H.E., and Schwalke U. IEEE Electron. Dev. Lett. 24 (2003) 87
2. Hall S., Buiu O., and Lu Y. IEEE Trans. Electron. Dev. 54 (2007) 272
3. Houssa M., Afanas'ev V.V., Stesmans A., and Heyns M. Appl. Phys. Lett. 77 (2000) 1885
4. Nicollian E.H., and Brews J.R. MOS Physics and Technology (1982), John Wiley & Sons