Recombination Mechanisms in 1.3-μm inAs quantum-dot lasers

IEEE Photonics Technology Letters

Volumn 18, Issue 8, 2006, Pages 965-967

  Sandall, I C ^a   Smowton, P M ^a   Walker, C L ^a   Liu, H Y ^b   Hopkinson, M ^b   Mowbray, D J ^b  

^a CARDIFF UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

Quamtum dots (QDs); Semiconductor lasers

Indexed keywords

CURRENT DENSITY; HIGH TEMPERATURE OPERATIONS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM DOTS;

RADIATIVE RECOMBINATION; RECOMBINANTION MECHANISMS;

SEMICONDUCTOR LASERS;

EID: 33645817736     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2006.873560     Document Type: Article

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