Improved performance of 1.3-μm in(Ga)As quantum-dot lasers by modifying the temperature profile of the GaAs spacer layers

IEEE Photonics Technology Letters

Volumn 18, Issue 14, 2006, Pages 1557-1559

  Walker, C L ^a   Sandall, I C ^a   Smowton, P M ^a   Mowbray, D J ^b   Liu, H Y ^b   Liew, S L ^b   Hopkinson, M ^b  

^a CARDIFF UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

Optical gain; Optical loss; Quantum dots (QDs); Semiconductor lasers

Indexed keywords

CONTINUOUS WAVE LASING; EDGE EMITTING LASERS; GAAS; MODAL GAIN; P-DOPING; QUANTUM DOTS; QUANTUM DOTS (QDS); SPACER LAYER; TEMPERATURE PROFILES; THRESHOLD CURRENTS; VERTICAL-CAVITY SURFACE EMITTING LASER;

GALLIUM ALLOYS; GALLIUM ARSENIDE; GROWTH TEMPERATURE; LASERS; OPTICAL GAIN; OPTICAL WAVEGUIDES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SURFACE EMITTING LASERS;

QUANTUM DOT LASERS;

EID: 34248544632     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2006.879592     Document Type: Article

References (8)

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