Analysis of gain saturation in In0.02Ga0.98N/In0.16Ga0.84N multiple quantum wells

Applied Physics Letters

Volumn 79, Issue 21, 2001, Pages 3434-3436

  Kyhm, K ^a   Taylor, R A ^a   Ryan, J F ^a   Someya, T ^b   Arakawa, Y ^b  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035914780     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1421094     Document Type: Article

References (14)

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