Performance and optical gain characteristic of InGaN MQW laser diodes

Journal of Luminescence

Volumn 87, Issue , 2000, Pages 135-139

  Kneissl, Michael ^a   Van De Walle, Chris G ^a   Bour, David P ^a   Romano, Linda T ^a   Goddard, Lynford L ^a   Master, Cyrus P ^a   Northrup, John E ^a   Johnson, Noble M ^a  

^a PALO ALTO RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; CURRENT DENSITY; ELECTRIC POWER SUPPLIES TO APPARATUS; EMISSION SPECTROSCOPY; OPTICAL PROPERTIES; PARTIAL DIFFERENTIAL EQUATIONS; PHASE SEPARATION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; TRANSMISSION ELECTRON MICROSCOPY;

INDIUM GALLIUM NITRIDE; OPTICAL GAIN; PSEUDOMORPHIC STRAIN; THRESHOLD CURRENT;

QUANTUM WELL LASERS;

EID: 0033738092     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-2313(99)00247-1     Document Type: Article

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