MOVPE growth of improved nonequilibium MCT device structures for near-ambient-temperature heterodyne detectors

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3122, Issue , 1997, Pages 453-464

  Maxey, C D ^a   Jones, C L ^a   Metcalfe, N E ^a   Catchpole, R A ^a   Gordon, Neil T ^b   White, A M ^b   Elliot, C T ^b  

^a GEC Marconi Infra Red Ltd   (United Kingdom)

^b DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

Author keywords

Auger suppression; Doping; Heterodyne infrared detectors; MCT; MOVPE growth

Indexed keywords

AUGERS; CADMIUM; CADMIUM ALLOYS; CADMIUM COMPOUNDS; CARRIER LIFETIME; CRYSTAL GROWTH; DETECTORS; DOPING (ADDITIVES); FREQUENCY RESPONSE; GALLIUM ALLOYS; GROWTH (MATERIALS); HETERODYNING; INFRARED DETECTORS; MERCURY (METAL); MICROMETERS; POLARIZATION; REMOTE SENSING; SEMICONDUCTING CADMIUM COMPOUNDS; SUBSTRATES; TELLURIUM COMPOUNDS; THICKNESS MEASUREMENT; WIRELESS TELECOMMUNICATION SYSTEMS;

AUGER SUPPRESSION; DOPING; HETERODYNE INFRARED DETECTORS; MCT; MOVPE GROWTH;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 58649108069     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.292713     Document Type: Conference Paper

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