Extended defects in epitaxial cadmium mercury telluride

Journal of Crystal Growth

Volumn 159, Issue 1-4, 1996, Pages 1090-1095

  Wasenczuk, A ^a   Willoughby, A F W ^a   Mackett, P ^b   O'Keefe, E ^b   Capper, P ^b   Maxey, C D ^b  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^b GEC Marconi Infra Red Limited   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; CRYSTAL DEFECTS; DISLOCATIONS (CRYSTALS); LIQUID PHASE EPITAXY; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SURFACES;

CADMIUM MERCURY TELLURIDE; SCREW DISLOCATIONS;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0030562443     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00755-5     Document Type: Article

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