Recent results on metalorganic vapor phase epitaxially grown HgCdTe heterostructure devices

Journal of Electronic Materials

Volumn 25, Issue 8, 1996, Pages 1139-1145

  Elliott, C T ^a   Gordon, N T ^a   Hall, R S ^a   Phillips, T J ^a   White, A M ^a   Jones, C L ^b   Maxey, C D ^b   Metcalfe, N E ^b  

^a DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

^b GEC Marconi Infra Red Limited   (United Kingdom)

Author keywords

Infrared LEDs; MCT; Metalorganic vapor phase epitaxy (MOVPE); Nonequilibrium detectors

Indexed keywords

EID: 0000368965     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02654999     Document Type: Article

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