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Volumn 25, Issue 8, 1996, Pages 1276-1285

Growth of fully doped Hg1-xCdxTe heterostructures using a novel iodine doping source to achieve improved device performance at elevated temperatures

Author keywords

Diffusion; Doping; Heterojunctions; HgCdTe; Metalorganic vapor phase epitaxy (MOVPE)

Indexed keywords


EID: 3142721323     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02655020     Document Type: Article
Times cited : (27)

References (37)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.