Independently accessed back-to-back HgCdTe photodiodes: A new dual-band infrared detector

Journal of Electronic Materials

Volumn 24, Issue 5, 1995, Pages 669-679

  Reine, M B ^a   Norton, P W ^a   Starr, R ^a   Weiler, M H ^a   Kestigian, M ^a   Musicant, B L ^a   Mitra, P ^b   Schimert, T ^b   Case, F C ^b   Bhat, Lb ^c   Ehsani, H ^c   Rao, V ^c  

^a Loral Infrared and Imaging Systems   (United States)

^b Loral Vought Systems Corporation   (United States)

^c RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

Dual band detectors; focal plane arrays; HgCdTe; Infrared detectors; Metalorganic chemical vapor deposition (MOCVD)

Indexed keywords

FABRICATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTODIODES; SEMICONDUCTOR DEVICE STRUCTURES;

BACK TO BACK PHOTODIODE STRUCTURES; DUAL BAND DETECTORS; FOCAL PLANE ARRAYS; MERCURY CADMIUM TELLURIDE; SPECTRAL CROSSTALK;

INFRARED DETECTORS;

EID: 0029304719     PISSN: 03615235     EISSN: 1543186X     Source Type: Journal    
DOI: 10.1007/BF02657977     Document Type: Article

References (15)

1. Mercury cadmium telluride junctions grown by liquid phase epitaxy
2. Growth and characterization of P-on-n HgCdTe liquid-phase epitaxy heterojunction material for 11–18 μm applications
3. Bias-switchable dual-band HgCdTe infrared photodetector