Doping in MOVPE of HgCdTe: Orientation effects and growth of high performance IR photodiodes

Journal of Crystal Growth

Volumn 170, Issue 1-4, 1997, Pages 542-548

  Mitra, P ^a   Case, R C ^a   Reine, M B ^b   Starr, R ^b   Weiler, M H ^b  

^a LOCKHEED MARTIN   (United States)

^b Lockheed Martin IR Imaging Systems   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; MERCURY COMPOUNDS; PHOTODIODES; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING TELLURIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

MERCURY CADMIUM TELLURIDE;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0030713597     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00651-3     Document Type: Article

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