Improved arsenic doping in metalorganic chemical vapor deposition of HgCdTe and in situ growth of high performance long wavelength infrared photodiodes

Journal of Electronic Materials

Volumn 25, Issue 8, 1996, Pages 1328-1335

  Mitra, P ^a   Tyan, Y L ^a   Case, F C ^a   Starr, R ^b   Reine, M B ^b  

^a Loral Vought Systems Corporation   (United States)

^b Loral Infrared and Imaging Systems   (United States)

Author keywords

Arsenic doping; HgCdTe; Metalorganic chemical vapor deposition (MOCVD); Photodiodes; Tertiarybutylarsine; tris dimethylaminoarsenic

Indexed keywords

EID: 0004537545     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02655028     Document Type: Article

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