Modifying residual stress and stress gradient in LPCVD Si3N4 film with ion implantation

Sensors and Actuators, A: Physical

Volumn 130-131, Issue SPEC. ISS., 2006, Pages 352-357

  Shi, Wendian ^a   Zhang, Haixia ^a   Zhang, Guobing ^a   Li, Zhihong ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

Ion implantation; LPCVD Si3N4; Residual stress; Stress gradient; Thermal annealing

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; COMPRESSIVE STRESS; ELASTIC MODULI; ION IMPLANTATION; PRESSURE EFFECTS; RESIDUAL STRESSES; THERMOANALYSIS;

ATOMIC COLLISION; LPCVD SI3N4; STRESS GRADIENT; THERMAL ANNEALING;

THIN FILMS;

EID: 33745819215     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2005.10.008     Document Type: Article

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