Growth and characterization of thick GaN layers grown by halide vapour phase epitaxy on lattice-matched AlInN templates

Journal of Crystal Growth

Volumn 311, Issue 2, 2009, Pages 292-297

  Hemmingsson, C ^a   Boota, M ^a   Rahmatalla, R O ^a   Junaid, M ^a   Pozina, G ^a   Birch, J ^a   Monemar, B ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

A1. Crystal morphology; A1. Interfaces; A1. Roughening; A2. Growth from vapour; A3. Hydride vapour phase epitaxy; B2. Semiconducting III V materials

Indexed keywords

ALUMINUM; CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); GALLIUM ALLOYS; GALLIUM NITRIDE; GROWTH (MATERIALS); HYDROGEN; MORPHOLOGY; PHASE INTERFACES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; SULFUR COMPOUNDS; TENSILE STRAIN; TENSILE STRENGTH; TIN; TITANIUM COMPOUNDS; TITANIUM NITRIDE; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY;

A1. CRYSTAL MORPHOLOGY; A1. INTERFACES; A1. ROUGHENING; A2. GROWTH FROM VAPOUR; A3. HYDRIDE VAPOUR PHASE EPITAXY; B2. SEMICONDUCTING III-V MATERIALS;

FILM GROWTH;

EID: 58549101086     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.11.046     Document Type: Article

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