Electrical resistivity and photoluminescence of zinc oxide films prepared by ultrasonic spray pyrolysis

Physica Status Solidi (A) Applications and Materials Science

Volumn 206, Issue 1, 2009, Pages 106-115

  Bouzid, Khedidja ^a   Djelloul, Abdelkader ^b   Bouzid, Noureddine ^c   Bougdira, Jamal ^d  

^a Universite Mentouri Constantine   (Algeria)

^b ABBES LAGHROUR UNIVERSITY   (Algeria)

^c KASDI MERBAH UNIVERSITY   (Algeria)

^d INSTITUT JEAN LAMOUR   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND EDGES; ELECTRICAL RESISTIVITIES; EXCITATION SOURCES; FOURIER TRANSFORM INFRARED SPECTROSCOPY (MIT FTIR); GREEN EMISSIONS; LUMINESCENCE MECHANISMS; PHOTOLUMINESCENCE (PL) MEASUREMENTS; RED SHIFTING; SUBSTRATE TEMPERATURE (ST); UV-VISIBLE; VOLUME RATIOS; X RAY DIFFRACTION (XRD); ZINC ACETATE DIHYDRATE; ZINC OXIDE FILMS; ZNO FILMS; ZNO THIN FILMS;

CHEMICAL REACTIONS; DEIONIZED WATER; DISSOLUTION; ELECTRIC RESISTANCE; EMISSION SPECTROSCOPY; ETHANOL; FILM PREPARATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; FOURIER TRANSFORMS; INFRARED SPECTROSCOPY; LEAKAGE (FLUID); LIGHT; LIGHT EMISSION; LUMINESCENCE; MERCURY (METAL); METALLIC FILMS; METHANOL; OPTICAL FILMS; OXIDES; OXYGEN; OXYGEN VACANCIES; PHOTOLUMINESCENCE; PYROLYSIS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ZINC COMPOUNDS; SOLIDS; SPRAY PYROLYSIS; SUBSTRATES; THIN FILMS; ULTRASONIC APPLICATIONS; ULTRASONIC TESTING; ULTRASONICS; VACANCIES; X RAY ANALYSIS; ZINC; ZINC COMPOUNDS; ZINC OXIDE;

OXIDE FILMS;

EID: 58449108102     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200824403     Document Type: Article

References (60)

1. W. Y, Liang and A. D. Yoffe, Phys, Rev. Lett, 20, 59 (1968).
2. I. V. Kityk, J, Ebothe, A, Elchichou, M. Addou, A. Bougrine, and B. Sahraoui, Phys. Status Solidi B 234, 553 (2002).
3. F. K. Shan, B. C. Shin, S. C. Kim, and Y. S. Yu, J. Eur. Ceram. Soc. 24, 1861 (2004).
4. K. Hara, T. Horiguchi, T. Kinoshita, K. Sayama, H. Sugihara, and H. Arakawa, Sol. Energy Mater. Sol. Cells 64, 115 (2000).
5. T. Makino, C. H. Chia, T. T. Nguen, Y. Segawa, M. Kawasaki, A. Ohtomo, K. Tamura, and H. Koinuma, Appl. Phys. Lett, 77, 1632 (2000).
6. W. Jia, K. Monge, and F. Fernandez, Opt. Mater, 23, 27 (2003),
7. M. H. Huang, Y. Wu, H. Feick, N. Tran, E. Weber, and P. Yang, Adv. Mater. 13, 113 (2001).
8. K. I. Ogata, T, Kawanishi, K. Maejima, K. Sakurai, Shi. Fujita, and Shig, Fujita, Jpn. J. Appl. Phys. 40, 657 (2001).
9. Y. R. Ryu, S. Zhu, D. C. Look, J. M. Wrobel, H. M. Jeong, and H. W. White, J. Cryst. Growth 216, 330 (2000).
10. E. G. Bylander, J. Appl. Phys. 49, 1188 (1978).
11. K. Vanheusden, C. H. Seager, W. L. Warren, D. R. Tallant, and J. A. Voiget, Appl. Phys. Lett. 68, 403 (1996).
12. M. Liu, A. H. Kitai, and P. Mascher, J. Lumin. 54, 35 (1992).
13. B. Lin, Z. Fu, and Y. Jia, Appl. Phys. Lett. 79, 943 (2001).
14. G. Muller, Phys. Status Solidi B 76, 525 (1976).
15. F. A. Kröger and H. J. Vink, J. Chem. Phys. 22, 250 (1954).
16. V. Soriano and D. Galland, Phys. Status Solidi B 77, 739 (1976).
17. W. F. Wei, Phys. Rev. B 15, 2250 (1977).
18. Y. Zhang and Y. D. Li, J. Phys. Chem. B 108, 17805 (2004).
19. B. D. Cullity, Elements of X-Ray Diffraction, 2nd ed. (Addison-Wesley, Reading, MA, 1978), p. 102.
20. E. V. Lavrov, J. Weber, F. Börrnert, C. G. Van de Walle, and R. Helbig, Phys. Rev. B 66, 165205 (2002).
21. N. B. Colthup, L. H. Daly, and S. E. Wiberly, Introduction to Infrared and Raman Spectroscopy, 3rd ed. (Academic Press, New York, 1990), p. 546.
22. B. Smith, Infrared Spectral Interpretation, a Systematic Approach (CRC Press, Boca Raton, FL, 1999), p. 265.
23. N. H. Nickel and K. Fleischer, Phys. Rev. Lett. 90, 197402 (2003).
24. G.-C. Yi and B. W. Wessels, Appl. Phys. Lett. 70, 357 (1997).
25. G. Socrates, Infrared and Raman Characteristic Group Frequencies, 3rd ed. (Wiley, New York, 2001), p. 347.
26. K. Nakamoto, Infrared and Raman Spectra of Inorganic and Coordination Compounds (Wiley, New York, 1986), p. 231.
27. S. Sakohara, M. Ishida, and M. A. Anderson, J. Phys. Chem. B 102(50), 10169(1998).
28. W. Water and S. Y. Chu, Mater. Lett. 55, 67 (2002).
29. N. B. Pilling and R. E. Bedworth, J. Inst. Met. 29, 529 (1923).
30. I. de Wolf, Semicond. Sci. Technol. 11, 139 (1996).
31. S. S. Mitra, O. Brafman, W. B. Daniels, and R. K. Crawford, Phys. Rev. 186(3), 942 (1969).
32. M. R. Baklanov, K. P. Mogilnikov, V. G. Polovinkin, and F. N. Dultsev, J. Vac. Sci. Technol. B 18, 1385 (2000).
33. G. Wypych, Handbook of Fillers, 2nd ed. (Chem Tech Publishing, Canada, 1999), p. 172.
34. F. K. Shan, G. X. Liu, W. J. Lee, G. H. Lee, I. S. Kim, B. C. Shin, and Y. C. Kim, J. Cryst. Growth 277, 284 (2005).
35. R. Swanepoel, J. Phys. E 17, 896 (1984).
36. R. Swanepoel, J. Phys. E 16, 1214 (1983).
37. J. C. Manifacier, J. Gasiot, and J. P. Fillard, J. Phys. E 9, 1002 (1976).
38. E. M. Bachari, G. Baud, S. Ben Amor, and M. Jacquet, Thin Solid Films 348, 165 (1999).
39. E. Çetinörgü, S. Goldsmith, and R. L. Boxman, J. Cryst. Growth 299, 259 (2007).
40. X. T. Hao, J. Ma, D. H. Zhang, T. L. Yang, H. L. Ma, Y. G. Yang, C. F. Cheng, and H. Huang, Appl. Surf. Sci. 183, 137 (2001).
41. R. Ghosh, D. Basak, and S. Fujihara, J. Appl. Phys. 96, 2689 (2004).
42. M. S. Tokumoto, A. Smith, C. V. Santilli, S. H. Pulcinelli, A. F. Craievich, E. Elkaim, A. Traverse, and V. Briois, Thin Solid Films 416, 284 (2002).
43. C. Lee, K. Lim, and J. Song, Sol. Energy Mater. Sol. Cells 43, 37 (1996).
44. D. C. Reynolds, D. C. Look, B. Jogai, J. E. Van Nostrand, R. Jones, and J. Jenny, Solid State Commun. 106, 701 (1998).
45. Y. C. Kong, D. P. Yu, B. Zhang, W. Fang, and S. Q. Feng, Appl. Phys. Lett. 78, 407 (2001).
46. K. Vanheusden, W. L. Warren, C. H. Seager, D. R. Tallant, J. A. Voigt, and B. E.Gnade, J. Appl. Phys. 79, 7983 (1996).
47. D. C. Look and B. Claflin, Phys. Status Solidi B 241, 624 (2004).
48. A. Janotti and C. G. Van de Walle, Appl. Phys. Lett. 87, 122102 (2005).
49. S. A. Studenikin, N. Golego, and M. Cocivera, J. Appl. Phys. 84(4), 2287 (1998).
50. V. Srikant and D. R. Clarke, J. Appl. Phys. 83, 5447 (1998).
51. L. N. Dem'yanets, L. E. Li, and T. G. Uvarova, J. Cryst. Growth 287, 23 (2006).
52. F. A. Selim, M. H. Weber, D. Solodovnikov, and K. G. Lynn, Phys. Rev. Lett. 99, 085502 (2007).
53. D. Wang, H. W. Seo, C-C. Tin, M. J. Bozack, J. R. Williams, M. Park, N. Sathitsuksanoh, An-jen Cheng, and Y. H. Tzeng, J. Appl. Phys. 99, 113509 (2006).
54. D. H. Zhang, Z. Y. Xue, and Q. P. Wang, J. Phys. D 35, 2837 (2002).
55. B. J. Jin, S. Im, and S. Y. Lee, Thin Solid Films 366, 107 (2000).
56. S. Sakohara, L. D. Tickanen, and M. A. Anderson, J. Phys. Chem. 96, 11086 (1992).
57. G. H. Jonker, Solid State Electron. 7, 895 (1964).
58. A. van Dijken, E. A. Meulenkamp, D. Vanmaekelbergh, and A. Meijerink, J. Lumin. 90, 123 (2000).
59. J. D. Ye, S. L. Gu, F. Gi, S. M. Zhu, S. M. Liu, X. Zhou, W. Liu, L. Q. Hu, R. Zhang, Y. Shi, and Y. D. Zheng, Appl. Phys. A 81, 759 (2005).
60. Z.-M. Liao, H.-Z. Zhang, Y.-B. Zhou, J. Xu, J.-M. Zhang, and D.-P. Yu, Phys. Lett. A 372, 4505 (2008).