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Volumn 255, Issue 8, 2009, Pages 4515-4520

Picosecond pulsed laser ablation and micromachining of 4H-SiC wafers

Author keywords

Ablation; Laser; MEMS; Micromachining; Silicon carbide; Ultra short pulse

Indexed keywords

ABLATION; COMPOSITE MICROMECHANICS; COST EFFECTIVENESS; DEFECT DENSITY; DIAPHRAGMS; FIBER LASERS; LASER ABLATION; LASERS; MEMS; MICROMACHINING; MULTIPHOTON PROCESSES; PICOSECOND LASERS; PULSE REPETITION RATE; PULSED LASER APPLICATIONS; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE; SILICON WAFERS; SURFACE DEFECTS; ULTRASHORT PULSES;

EID: 58349120004     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.11.071     Document Type: Article
Times cited : (59)

References (23)
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    • http://www.mdatechnology.net/update.aspx?id=a5188
  • 13
    • 58349114000 scopus 로고    scopus 로고
    • M. Manasreh, K. Miller, Q. Zhou, Z. Feng, J. Chen, I.T. Ferguson, Silicon carbide-materials, processing and devices, MRS Proc. 2006, 640 H5.23.
    • M. Manasreh, K. Miller, Q. Zhou, Z. Feng, J. Chen, I.T. Ferguson, Silicon carbide-materials, processing and devices, MRS Proc. 2006, 640 H5.23.
  • 16
    • 58349116796 scopus 로고    scopus 로고
    • W. Chism, Method of direct coulomb explosion in laser ablation of semiconductor structures, US Patent 20070293057 (2007).
    • W. Chism, Method of direct coulomb explosion in laser ablation of semiconductor structures, US Patent 20070293057 (2007).
  • 21
    • 0042981707 scopus 로고
    • Harris G.L. (Ed), IET. 0852968701
    • In: Harris G.L. (Ed). Properties of SiC (1995), IET. 0852968701
    • (1995) Properties of SiC


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.