Modulation-doped InAs-InGaAs quantum dot longwave infrared photodetector with high quantum efficiency

Electronics Letters

Volumn 43, Issue 10, 2007, Pages 589-590

  Lu, X ^a   Meisner, M J ^b   Vaillancourt, J ^a   Li, J ^c   Liu, W ^c   Qian, X ^c   Goodhue, W D ^c  

^a University of Massachusetts   (United States)

^b RAYTHEON COMPANY   (United States)

^c University of Massachusetts Lowell   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INDIUM ARSENIDE; MODULATION; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS;

INFRARED PHOTODETECTION; PHOTORESPONSIVITY; QUANTUM DOT (QD) LONGWAVE INFRARED PHOTODETECTOR (QDIP);

INFRARED DETECTORS;

EID: 34248361550     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20070512     Document Type: Article

References (12)

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