Enhanced field emission from Si doped nanocrystalline AlN thin films

Applied Surface Science

Volumn 255, Issue 8, 2009, Pages 4536-4541

  Thapa, R ^a   Saha, B ^a   Chattopadhyay, K K ^a  

^a JADAVPUR UNIVERSITY   (India)

Author keywords

AlN thin film; Dielectric property; Field emission; Si doping

Indexed keywords

ALUMINUM COATINGS; ALUMINUM NITRIDE; DIELECTRIC PROPERTIES; DIELECTRIC PROPERTIES OF SOLIDS; FIELD EMISSION; III-V SEMICONDUCTORS; LATTICE CONSTANTS; NANOCRYSTALS; NITRIDES; PARTICLE SIZE; SEMICONDUCTOR DOPING; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

ALN THIN FILMS; DIRECT CURRENT SPUTTERING; EMISSION CHARACTERISTICS; ENERGY DISPERSIVE ANALYSIS OF X-RAYS; HEXAGONAL ALUMINUM NITRIDES; MAXIMUM CURRENT DENSITY; NANOCRYSTALLINE ALUMINUM; SI-DOPING;

SILICON;

EID: 58349106868     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.11.063     Document Type: Article

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