Low-voltage organic thin film transistors with hydrophobic aluminum nitride film as gate insulator

Organic Electronics

Volumn 8, Issue 4, 2007, Pages 450-454

  Zan, Hsiao Wen ^a   Yen, Kuo Hsi ^a   Liu, Pu Kuan ^a   Ku, Kuo Hsin ^b   Chen, Chien Hsun ^b   Hwang, Jennchang ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

AlN; Contact angle; High k; OTFTs; Pentacene; Sputtering; Surface energy

Indexed keywords

ALUMINUM COMPOUNDS; CONTACT ANGLE; ELECTRIC POTENTIAL; FREE ENERGY; GATE DIELECTRICS; HYDROPHOBICITY; INTERFACIAL ENERGY; POLYMER FILMS; SPUTTERING;

FIELD EFFECT MOBILITY; LOW-VOLTAGE ORGANIC THIN FILM TRANSISTORS; PENTACENE; SURFACE FREE ENERGY;

THIN FILM TRANSISTORS;

EID: 34248551507     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2006.12.001     Document Type: Article

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