Use of adaptive network fuzzy inference system to predict plasma charging damage on electrical MOSFET properties

Expert Systems with Applications

Volumn 36, Issue 3 PART 2, 2009, Pages 6570-6573

  Kim, Byungwhan ^a   Kwon, Hee Ju ^a   Choi, Seongjin ^b  

^a Sejong University   (South Korea)

^b Korea University   (South Korea)

Author keywords

Adaptive network fuzzy inference system; Charging damage; Metal oxide semiconductor field effect transistors; Plasma

Indexed keywords

ANTENNAS; FORECASTING; FUZZY LOGIC; FUZZY SYSTEMS; MEAN SQUARE ERROR; MEMBERSHIP FUNCTIONS; METALS; MOS DEVICES; MOSFET DEVICES; OXIDE SEMICONDUCTORS; PLASMAS; REGRESSION ANALYSIS; THRESHOLD VOLTAGE;

ADAPTIVE NETWORK FUZZY INFERENCE SYSTEMS; CHARGING DAMAGE; IN-PROCESS PARAMETERS; NORMALIZATION FACTORS; PREDICTION PERFORMANCE; ROOT MEAN SQUARE ERRORS; STATISTICAL REGRESSION MODEL; TYPE OF MEMBERSHIP FUNCTIONS;

FUZZY INFERENCE;

EID: 58349094924     PISSN: 09574174     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.eswa.2008.07.034     Document Type: Article

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