Low resistivity tungsten for contact metallization

Microelectronic Engineering

Volumn 82, Issue 3-4 SPEC. ISS., 2005, Pages 261-265

  Smith, Steven ^a   Aouadi, Khaled ^b   Collins, Josh ^c   Van Der Vegt, Eric ^a   Basso, Marie Thérese ^b   Juhel, Marc ^b   Pokrant, Simone ^a  

^a NXP SEMICONDUCTORS   (Netherlands)

^b STMICROELECTRONICS   (France)

^c NOVELLUS SYSTEMS INC   (United States)

Author keywords

ALD; Contacts; Low resistivity; PNL; Tungsten

Indexed keywords

ASPECT RATIO; FLUORINE COMPOUNDS; NICKEL COMPOUNDS; THIN FILMS; TUNGSTEN;

CONTACT PERFORMANCE; ULTRA-THIN TUNGSTEN FILMS;

ELECTRIC CONDUCTIVITY;

EID: 28044432767     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.07.032     Document Type: Conference Paper

References (5)

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3. S.-H. Lee, L. Gonzalez, J. Collins, K. Ashtiani, K. Levy, in: Proceedings of AMC2001, 2001, pp. 649-654.
4. M. Yang et. al., in: Proceedings of AMC2001, 2001, pp. 655-660.
5. S.M. Rossnagel, Semiconductor Fabtech, Edition Number 24, fourth edition, 2004, pp. 13-17.