Decay lengths for diffusive transport activated by andreev reflections in al/n-gaas/al superconductor-semiconductor-superconductor junctions

Physical Review Letters

Volumn 78, Issue 5, 1997, Pages 931-934

  Kutchinsky, J ^a   Taboryski, R ^b   Clausen, T ^b   Sorensen C B ^a   Kristensen, A ^a   Lindelof, P E ^a   Bindslev Hansen, J ^b   Schelde Jacobsen, C ^b   Skov, J L ^b  

^a UNIVERSITY OF COPENHAGEN   (Denmark)

^b TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CALCULATIONS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; ELECTRIC VARIABLES MEASUREMENT; ELECTRODES; ELECTRON SCATTERING; ENERGY GAP; REFLECTION; SEMICONDUCTING GALLIUM ARSENIDE;

ANDREEV REFLECTIONS; DECAY LENGTH; INELASTIC DIFFUSION LENGTH; JOSEPHSON COUPLING; PHASE COHERENCE; PROXIMITY EFFECTS; SUBHARMONIC ENERGY GAP STRUCTURE; SUPERCONDUCTOR SEMICONDUCTOR SUPERCONDUCTOR JUNCTIONS;

SEMICONDUCTOR JUNCTIONS;

EID: 0031550470     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.78.931     Document Type: Article

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