Transmission electron microscopy study on pre-strained InGaN/GaN quantum wells

Journal of Crystal Growth

Volumn 297, Issue 1, 2006, Pages 66-73

  Chen, Yung Sheng ^a   Yao, Li Chieh ^a   Lin, Yu Li ^a   Hung, Ling ^a   Huang, Chi Feng ^a   Tang, Tsung Yi ^a   Huang, Jeng Jie ^a   Shiao, Wen Yu ^a   Yang, C C ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

A3. Metalorganic vapor phase; A3. Quantum wells; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

GALLIUM NITRIDE; NANOSTRUCTURED MATERIALS; NITRIDES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

METALORGANIC VAPOR PHASE; SEMICONDUCTING III-V MATERIALS; STRAIN STATE ANALYSIS (SSA);

TRANSMISSION ELECTRON MICROSCOPY;

EID: 34547698043     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.08.040     Document Type: Article

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