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Volumn 36, Issue 4, 2007, Pages 426-430

Comparison of GaN and In 0.04Ga 0.96N p-layers on the electrical and electroluminescence properties of green light emitting diodes

(5) Limb, J B a Lee, W a Ryou, J H a Yoo, D a,b Dupuis, R D a,b

a GEORGIA INSTITUTE OF TECHNOLOGY (United States)

b Georgia Institute of Technology (United States)

Author keywords

Gallium nitride (GaN); InGaN; Light emitting diode (LED); Metalorganic chemical vapor deposition (MOCVD)

Indexed keywords

GREEN LIGHT EMITTING DIODES; P-GAN LAYERS;

ELECTRIC PROPERTIES; ELECTROLUMINESCENCE; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

GALLIUM NITRIDE;

EID: 34249055960 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-006-0072-6 Document Type: Conference Paper

Times cited : (20)

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