The effect of ultrasonic agitation on the stripping of photoresist using supercritical CO2 and co-solvent formulation

Microelectronic Engineering

Volumn 86, Issue 2, 2009, Pages 171-175

  Kim, Sung Ho ^a   Yuvaraj, Haldorai ^a   Jeong, Yeon Tae ^a   Park, Chan ^a   Kim, Sok Won ^b   Lim, Kwon Taek ^a  

^a Pukyong National University   (South Korea)

^b University of Ulsan   (South Korea)

Author keywords

High dose ion implanted; Photoresist; Stripping; Supercritical carbon dioxide; Ultrasonic agitation

Indexed keywords

CARBON DIOXIDE; IONS; NONVOLATILE STORAGE; OXIDES; PHOTORESISTORS; PHOTORESISTS; SCANNING ELECTRON MICROSCOPY; SOLVENTS; STRIPPING (REMOVAL); SUPERCRITICAL FLUID EXTRACTION; SURFACE TREATMENT; ULTRASONIC APPLICATIONS; ULTRASONIC TESTING; ULTRASONICS;

CO SOLVENTS; EFFECTS OF TEMPERATURES; ENERGY DISPERSIVE; HIGH DOSE ION-IMPLANTED; PHOTORESIST REMOVALS; REACTION TIMES; SEMICONDUCTOR WAFERS; STRIPPING; STRIPPING RATES; SUPERCRITICAL; SUPERCRITICAL CARBON DIOXIDE; ULTRASONIC AGITATION;

STRIPPING (DYES);

EID: 58149235005     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.10.017     Document Type: Article

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